Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit

Abstract

Hole spin qubits based on germanium (Ge) have strong tunable spin orbit interaction (SOI) and ultrafast qubit operation speed. Here we report that the Rabi frequency (f_Rabi) of a hole spin qubit in a Ge hut wire (HW) double quantum dot (DQD) is electrically tuned through the detuning energy and middle gate voltage (V_M). f_Rabi gradually decreases with increasing detuning energy; on the contrary, f_Rabi is positively correlated with V_M. We attribute our results to the change of electric field on SOI and the contribution of the excited state in quantum dots to f_Rabi. We further demonstrate an ultrafast f_Rabi exceeding 1.2 GHz, which evidences the strong SOI in our device. The discovery of an ultrafast and electrically tunable f_Rabi in a hole spin qubit has potential applications in semiconductor quantum computing.

19 pages, 4 figures

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• Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots
• Supercurrent and multiple Andreev reflections in Ge hut nanowire Josephson Junctions