Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot

Abstract

Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We show that non-uniform electrode-induced strain produces nanometre-scale variations in the HH-LH splitting. Importantly, we find that this \RR{non-uniform strain causes} the HH-LH splitting to vary by up to 50\% across the active region of the quantum dot. We show that local electric fields can be used to displace the hole relative to the non-uniform strain profile, allowing a new mechanism for electric modulation of the hole g-tensor. Using this mechanism we demonstrate tuning of the hole $g$-factor by up to 500\%. In addition, we observe a \RR{potential} sweet spot where d$g_{(1\overline{1}0)}$/d$V$ = 0, offering a configuration to suppress spin decoherence caused by electrical noise. These results open a path towards a previously unexplored technology: engineering of \RR{non-uniform} strains to optimise spin-based devices.

12 pages, 4 figures

References in corpus (12)

• A four-qubit germanium quantum processor
• Spin relaxation and decoherence of holes in quantum dots
• Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
• A singlet triplet hole spin qubit in planar Ge
• Heavy hole states in Germanium hut wires
• Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
• On the nature of tunable hole g-factors in quantum dots
• Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot
• Silicon quantum dot devices with a self-aligned second gate layer
• Hole Spin Qubits in Ge Nanowire Quantum Dots: Interplay of Orbital Magnetic Field, Strain, and Growth Direction
• Dimensional reduction of the Luttinger Hamiltonian and g-factors of holes in symmetric two-dimensional semiconductor heterostructures
• Electrical control of the sign of the g-factor in a GaAs hole quantum point contact

Cited by in corpus (36)

• Semiconductor Spin Qubits
• A single hole spin with enhanced coherence in natural silicon
• Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold
• Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity
• Hole spin driving by strain-induced spin-orbit interactions
• Tunable hole spin-photon interaction based on g-matrix modulation
• Large even-odd spacing and $g$-factor anisotropy in PbTe quantum dots
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
• A singlet-triplet hole-spin qubit in MOS silicon
• High-fidelity spin qubit shuttling via large spin-orbit interaction
• Phase driving hole spin qubits
• Geometry of the dephasing sweet spots of spin-orbit qubits
• Classification and magic magnetic-field directions for spin-orbit-coupled double quantum dots
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Single-step high-fidelity three-qubit gates by anisotropic chiral interactions
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• Photo-assisted spin transport in double quantum dots with spin-orbit interaction
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• Probing details of spin--orbit coupling through Pauli spin blockade
• Effects of spin-orbit coupling and in-plane Zeeman fields on the critical current in two-dimensional hole gas SNS junctions
• Optimal operation of hole spin qubits
• Quantum estimation and remote charge sensing with a hole-spin qubit in silicon
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• All-electrical operation of a spin qubit coupled to a high-Q resonator
• Topological charge distributions of an interacting two-spin system
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases
• Theory of superconducting proximity effect in hole-based hybrid semiconductor-superconductor devices
• Envelope-function theory of inhomogeneous strain in semiconductor nanostructures
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Quantum Error Correction Assisted Axion Search in CMOS Spin Qubit Arrays
• Limitations of the $g$-tensor formalism of semiconductor spin qubits
• Switchable spin-photon coupling with hole spins in single-quantum dots
• Anomalous zero-field splitting for hole spin qubits in Si and Ge quantum dots
• Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling