A singlet-triplet hole-spin qubit in MOS silicon

Abstract

Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 us using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits.

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Cited by in corpus (16)

• Compromise-Free Scaling of Qubit Speed and Coherence
• Single-step high-fidelity three-qubit gates by anisotropic chiral interactions
• Optimal operation of hole spin qubits
• A spinless spin qubit
• A dressed singlet-triplet qubit in germanium
• Polarimetry With Spins in the Solid State
• Radiofrequency cascade readout of coupled spin qubits
• Electrical readout of spins in the absence of spin blockade
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control
• Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots
• Dressed basis sets for the modeling of exchange interactions in double quantum dots
• Spin-qubit readout analysis based on a hidden Markov model
• Switchable spin-photon coupling with hole spins in single-quantum dots
• Triplet-assisted leakage during singlet-triplet qubit readout with a quantum point contact
• Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling