Probing low noise at the MOS interface with a spin-orbit qubit

Abstract

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $\mu$s using 99.95% ${}^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.

arXiv commentSubmitted July 13, 2017. Supplementary information included with the paper

References in corpus (45)

• New Perspectives for Rashba Spin-Orbit Coupling
• Decoherence Free Subspaces for Quantum Computation
• Emergent Phenomena Induced by Spin-Orbit Coupling at Surfaces and Interfaces
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A Two Qubit Logic Gate in Silicon
• Electron spin coherence exceeding seconds in high purity silicon
• A CMOS silicon spin qubit
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization
• Quantum Coherence in a One-Electron Semiconductor Charge Qubit
• Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot
• Singlet-triplet spin blockade and charge sensing in a few-electron double quantum dot
• A fault-tolerant addressable spin qubit in a natural silicon quantum dot
• Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
• Two-axis control of a singlet-triplet qubit with an integrated micromagnet
• A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
• Suppression of spin relaxation in an InAs nanowire double quantum dot
• Coherent shuttle of electron-spin states
• Disentangling the effects of spin-orbit and hyperfine interactions on spin blockade
• Coherent Quantum Oscillations in a Silicon Charge Qubit
• Hyperfine interactions in silicon quantum dots
• Quantum Decoherence of the Central Spin in a Sparse System of Dipolar Coupled Spins
• Spin and valley-orbit splittings in SiGe/Si heterostructures
• Singlet-triplet splitting in double quantum dots due to spin orbit and hyperfine interactions
• Spin-orbit coupling and operation of multi-valley spin qubits
• Spin Splitting in Symmetrical SiGe Quantum Wells
• Extending the coherence of a quantum dot hybrid qubit
• High Resolution Valley Spectroscopy of Si Quantum Dots
• Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
• Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots
• Electric field effect on electron spin splitting in SiGe/Si quantum wells
• High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
• Electron g-factor of valley states in realistic silicon quantum dots
• Valley splitting of single-electron Si MOS quantum dots
• Spin relaxation anisotropy in a GaAs quantum dot
• An electrically driven spin qubit based on valley mixing
• Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs
• Dephasing of Si singlet-triplet qubits due to charge and spin defects
• Impact of g-factors and valleys on spin qubits in a silicon double quantum dot
• SiGe/Si quantum dot electron spin decoherence dependence on ${}^{73}$Ge
• Interplay of spin-orbit and hyperfine interactions in dynamical nuclear polarization in semiconductor quantum dots
• Effective one-band approach for the spin splittings in quantum wells
• Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems

Cited by in corpus (63)

• Semiconductor Spin Qubits
• A Crossbar Network for Silicon Quantum Dot Qubits
• Semiconductor Quantum Computation
• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• A singlet triplet hole spin qubit in planar Ge
• Quantum Dot Arrays in Silicon and Germanium
• Universal logic with encoded spin qubits in silicon
• Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations
• Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
• Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
• Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
• Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
• Adiabatic quantum state transfer in a semiconductor quantum-dot spin chain
• Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
• Electron g-factor of valley states in realistic silicon quantum dots
• Electric-field control and noise protection of the flopping-mode spin qubit
• Spin shuttling in a silicon double quantum dot
• Strong electron-electron interactions in Si/SiGe quantum dots
• A silicon singlet-triplet qubit driven by spin-valley coupling
• A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
• Network architecture for a topological quantum computer in silicon
• Is all-electrical silicon quantum computing feasible in the long term?
• Analog Quantum Simulation of the Dynamics of Open Quantum Systems with Quantum Dots and Microelectronic Circuits
• Electromagnetic control of valley splitting in ideal and disordered Si quantum dots
• Coherent spin-valley oscillations in silicon
• A singlet-triplet hole-spin qubit in MOS silicon
• All-electrical control of hole singlet-triplet spin qubits at low leakage points
• Magnetic Gradient Fluctuations from Quadrupolar ${}^{73}$Ge in Si/SiGe Exchange-Only Qubits
• Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field
• High-fidelity two-qubit gates of hybrid superconducting-semiconducting singlet-triplet qubits
• Bounds to electron spin qubit variability for scalable CMOS architectures
• Adiabatic two-qubit gates in capacitively coupled quantum dot hybrid qubits
• Switching between relaxation hotspots and coldspots in disordered spin qubits
• Quantum dots with split enhancement gate tunnel barrier control
• Observation of spin-orbit coupling induced Weyl points and topologically protected Kondo effect in a two-electron double quantum dot
• Impact of valley phase and splitting on readout of silicon spin qubits
• Pulse sequence designed for robust C-phase gates in SiMOS and Si/SiGe double quantum dots
• Enhancing the dipolar coupling of a $S$-$T_0$ qubit with a transverse sweet spot
• A Silicon Surface Code Architecture Resilient Against Leakage Errors
• G-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field
• Magnetic gradient free two axis control of a valley spin qubit in SiGe
• Robust implementation of quantum gates despite always-on exchange coupling in silicon double quantum dots
• Line Shapes of Electric Dipole Spin Resonance in Pauli Spin Blockade
• Control of dephasing in spin qubits during coherent transport in silicon
• Hyperfine-assisted fast electric control of dopant nuclear spins in semiconductors
• Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices
• Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
• Theory of Silicon Spin Qubit Relaxation in a Synthetic Spin-Orbit Field
• Charge noise suppression in capacitively coupled singlet-triplet spin qubits under magnetic field
• Long-range two-hybrid-qubit gates mediated by a microwave cavity with red sidebands
• Compressed Optimization of Device Architectures (CODA) for semiconductor quantum devices
• Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe
• Hyperfine-assisted decoherence of a phosphorus nuclear-spin qubit in silicon
• Leakage and dephasing in ${}^{28}$Si-based exchange-only spin qubits
• Microscopic theory on magnetic-field-tuned sweet spot of exchange interactions in multielectron quantum-dot systems
• Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
• Radiofrequency cascade readout of coupled spin qubits
• Electrical Interconnects for Silicon Spin Qubits
• Fast spin-valley-based quantum gates in Si with micromagnets
• Effect of device design on charge offset drift in Si/SiO${}_2$ single electron devices
• Model validation and error attribution for a drifting qubit
• Dressed basis sets for the modeling of exchange interactions in double quantum dots
• Quantifying Flat-Band Voltage in Si Metal-Oxide-Semiconductor Structures: An Evaluation via Terahertz Emission Spectroscopy (TES)