activity
20112026
most citedProbing low noise at the MOS interface with a spin-orbit qubit

112 citations · 295 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2026

Predicting the Slow Drift of Nuclear Spin Noise in Semiconductor Spin Qubits

Wayne M. Witzel, Jesse J. Lutz, Matthew D. Grace +3

The dynamics of a nuclear spin bath generates magnetic noise that is a key contributor to the decoherence of electron spin qubits in electrostatically-defined quantum dots. In this…

cond-mat.mes-hall2026

Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots

N. Tobias Jacobson, Natalie D. Foster, Ryan M. Jock +5

While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface result…

cond-mat.mes-hall2026

3D tomography of exchange phase in a Si/SiGe quantum dot device

Dylan Albrecht, Sarah Thompson, N. Tobias Jacobson +1

The exchange interaction is a foundational building block for the operation of spin-based quantum processors. Extracting the exchange interaction coefficient , as a…

cond-mat.mes-hall2024

Dephasing and error dynamics affecting a singlet-triplet qubit during coherent spin shuttling

Natalie D. Foster, Jacob D. Henshaw, Martin Rudolph +2

Quantum information transport over micron to millimeter scale distances is critical for the operation of practical quantum processors based on spin qubits. One method of achieving…

cond-mat.mes-hall2021★ 47 cited

A silicon singlet-triplet qubit driven by spin-valley coupling

Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph +3

Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-…

cond-mat.mes-hall2019★ 2 cited

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

M. J. Curry, M. Rudolph, T. D. England +12

High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandw…

astro-ph.HE2018★ 56 cited

Blazar Mrk 501 shows rhythmic oscillations in its -ray emission

Gopal Bhatta

Quasi-periodic oscillations (QPO) originating from innermost regions of blazars can provide unique perspective of some of the burning issues in blazar studies including disk-jet co…

cond-mat.mes-hall2018★ 12 cited

All-electrical universal control of a double quantum dot qubit in silicon MOS

Patrick Harvey-Collard, Ryan M. Jock, N. Tobias Jacobson +12

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically contro…

cond-mat.mes-hall2017★ 112 cited

Probing low noise at the MOS interface with a spin-orbit qubit

Ryan M. Jock, N. Tobias Jacobson, Patrick Harvey-Collard +12

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers…

cond-mat.mes-hall2017★ 5 cited

Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems

M. Rudolph, P. Harvey-Collard, R. Jock +8

Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples…

cond-mat.mes-hall2015★ 44 cited

Electron spin coherence of shallow donors in natural and isotopically enriched germanium

A. J. Sigillito, R. M. Jock, A. M. Tyryshkin +4

Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. D…

cond-mat.mtrl-sci2011★ 17 cited

Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance

R. M. Jock, S. Shankar, A. M. Tyryshkin +7

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices…