All-electrical universal control of a double quantum dot qubit in silicon MOS

Abstract

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.

arXiv commentThe conference proceedings version incorrectly displays the orientation of the magnetic field in figure 1; this version is correct

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Cited by in corpus (6)

• Semiconductor Spin Qubits
• Coherent transfer of quantum information in silicon using resonant SWAP gates
• All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• Error correction for gate operations in systems of exchange-coupled singlet-triplet qubits in double quantum dots
• Phonon-assisted tunnelling in a double quantum dot molecule immersed in a cavity
• A dressed singlet-triplet qubit in germanium