112 citations · 316 across the 9 of their papers we have counts for
10 papers
A silicon singlet-triplet qubit driven by spin-valley coupling
Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph +3
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-…
All-electrical universal control of a double quantum dot qubit in silicon MOS
Patrick Harvey-Collard, Ryan M. Jock, N. Tobias Jacobson +12
Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically contro…
Long-term drift of Si-MOS quantum dots with intentional donor implants
Martin Rudolph, Bahman Sarabi, Roy Murray +2
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-…
Probing low noise at the MOS interface with a spin-orbit qubit
Ryan M. Jock, N. Tobias Jacobson, Patrick Harvey-Collard +12
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers…
Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems
M. Rudolph, P. Harvey-Collard, R. Jock +8
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples…
High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
Patrick Harvey-Collard, Benjamin D'Anjou, Martin Rudolph +9
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mappin…
Valley splitting of single-electron Si MOS quantum dots
John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson +10
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy state…
Coherent coupling between a quantum dot and a donor in silicon
Patrick Harvey-Collard, N. Tobias Jacobson, Martin Rudolph +8
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size…
Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy
E. Bussmann, M. Rudolph, G. S. Subramania +7
We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling…
Probing limits of STM field emission patterned Si:P -doped devices
M. Rudolph, S. M. Carr, G. Subramania +6
Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in…