All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Abstract

We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.

arXiv admin note: substantial text overlap with arXiv:1912.09806

References in corpus (7)

• An addressable quantum dot qubit with fault-tolerant control fidelity
• Electrically driven single electron spin resonance in a slanting Zeeman field
• An electrically driven spin qubit based on valley mixing
• SOI technology for quantum information processing
• Si CMOS Platform for Quantum Information Processing
• All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Cited by in corpus (6)

• Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
• A silicon singlet-triplet qubit driven by spin-valley coupling
• Coherent spin-valley oscillations in silicon
• A new FDSOI spin qubit platform with 40nm effective control pitch
• All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• Single-electron occupation in quantum dot arrays at selectable plunger gate voltage