Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

Abstract

We discuss a model for the on-site matrix elements of the sp3d5s* tight-binding hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model features on-site, off-diagonal couplings between the s, p and d orbitals, and is able to reproduce the effects of arbitrary strains on the band energies and effective masses in the full Brillouin zone. It introduces only a few additional parameters and is free from any ambiguities that might arise from the definition of the macroscopic strains as a function of the atomic positions. We apply this model to silicon, germanium and their alloys as an illustration. In particular, we make a detailed comparison of tight-binding and ab initio data on strained Si, Ge and SiGe.

Submitted to Phys. Rev. B

References in corpus (4)

• Quantum Transport Length Scales in Silicon-based Semiconducting Nanowires: Surface Roughness Effects
• Tetragonal and trigonal deformations in zinc-blende semiconductors : a tight-binding point of view
• Conduction band tight-binding description for silicon applied to phosphorous donors
• Effective mass anomalies in strained Si thin films and crystals

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