All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Abstract

We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration.

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Cited by in corpus (2)

• Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
• All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology