An electrically driven spin qubit based on valley mixing

Abstract

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a hetero-interface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave-function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times of 170ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.

References in corpus (32)

• Quantum Computation with Quantum Dots
• Silicon Quantum Electronics
• Coherent control of a single electron spin with electric fields
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A Two Qubit Logic Gate in Silicon
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Phonon-induced decay of the electron spin in quantum dots
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Coherent spin manipulation in an exchange-only qubit
• A fault-tolerant addressable spin qubit in a natural silicon quantum dot
• Two-qubit Gate of Combined Single Spin Rotation and Inter-dot Spin Exchange in a Double Quantum Dot
• Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling
• Rashba spin-orbit coupling and spin relaxation in silicon quantum wells
• Physical mechanisms of interface-mediated intervalley coupling in Si
• Interface roughness, valley-orbit coupling and valley manipulation in quantum dots
• Spin and valley-orbit splittings in SiGe/Si heterostructures
• Spin-orbit coupling and operation of multi-valley spin qubits
• High fidelity resonant gating of a silicon based quantum dot hybrid qubit
• Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots
• Fast and robust spin manipulation in a quantum dot by electric fields
• Intervalley coupling for interface-bound electrons in silicon: An effective mass study
• Generation of spin currents and spin densities in systems with reduced symmetry
• Control of valley dynamics in silicon quantum dots in the presence of an interface step
• Second Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot
• Two-spin dephasing by electron-phonon interaction in semiconductor double quantum dots
• Microscopic models for charge-noise-induced dephasing of solid-state qubits
• Characterizing gate operations near the sweet spot of an exchange-only qubit
• On the nature of steady states of spin distributions in the presence of spin-orbit interactions
• Spin polarization decay in spin-1/2 and spin-3/2 systems
• Electric generation of spin in crystals with reduced symmetry
• Electric dipole spin resonance in systems with a valley dependent g-factor

Cited by in corpus (30)

• Fidelity benchmarks for two-qubit gates in silicon
• Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
• Quantum Dot Arrays in Silicon and Germanium
• Probing low noise at the MOS interface with a spin-orbit qubit
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
• Valley dependent anisotropic spin splitting in silicon quantum dots
• On-demand electrical control of spin qubits
• Electric-field control and noise protection of the flopping-mode spin qubit
• Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
• Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
• Single-electron spin resonance in a nanoelectronic device using a global field
• A silicon singlet-triplet qubit driven by spin-valley coupling
• All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing
• Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon
• Coherent control of electron spin qubits in silicon using a global field
• Nonlinear response and crosstalk of electrically driven silicon spin qubits
• Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
• Impact of valley phase and splitting on readout of silicon spin qubits
• Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
• All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots
• Valley filtering and spatial maps of coupling between silicon donors and quantum dots
• Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
• Control of dephasing in spin qubits during coherent transport in silicon
• All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
• Valley blockade in a silicon double quantum dot
• Fast spin-valley-based quantum gates in Si with micromagnets
• Micromagnet-free operation of electron spin qubits in Si/Si${}_{1-x}$Ge${}_x$ vertical double quantum dots