Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
arXiv:2404.15762 · doi:10.1002/adma.202405916
Abstract
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. Our findings may provide a pathway towards all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).
References in corpus (42)
- Silicon Quantum Electronics
- An addressable quantum dot qubit with fault-tolerant control fidelity
- A programmable two-qubit quantum processor in silicon
- Spin-orbit qubit in a semiconductor nanowire
- A CMOS silicon spin qubit
- Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot
- Fidelity benchmarks for two-qubit gates in silicon
- Spin relaxation and decoherence of holes in quantum dots
- Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
- Electron spin decoherence in isotope-enriched silicon
- Hole spin dephasing time associated to hyperfine interaction in quantum dots
- Dynamic Nuclear Polarization with Single Electron Spins
- Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
- Experimental signature of phonon-mediated spin relaxation
- Probing low noise at the MOS interface with a spin-orbit qubit
- Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
- Singlet-triplet splitting in double quantum dots due to spin orbit and hyperfine interactions
- Spin-orbit coupling and operation of multi-valley spin qubits
- Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
- Theory of electric dipole spin resonance in quantum dots: Mean field theory with Gaussian fluctuations and beyond
- Electric field effect on electron spin splitting in SiGe/Si quantum wells
- Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots
- Effect of Exchange Interaction on Spin Dephasing in a Double Quantum Dot
- Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
- Valley dependent anisotropic spin splitting in silicon quantum dots
- Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
- Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot
- Electron g-factor of valley states in realistic silicon quantum dots
- Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
- Evidence for a quantum-spin-Hall phase in graphene decorated with Bi2Te3 nanoparticles
- Spin relaxation anisotropy in a GaAs quantum dot
- An electrically driven spin qubit based on valley mixing
- Pauli spin blockade in cotunneling transport through a double quantum dot
- Quantum Computing with Acceptor Spins in Silicon
- Spin-orbit dynamics of single acceptor atoms in silicon
- Resolving Spin-Orbit and Hyperfine Mediated Electric Dipole Spin Resonance in a Quantum Dot
- Leakage-current lineshapes from inelastic cotunneling in the Pauli spin blockade regime
- Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
- Spin-orbit induced hole spin relaxation in InAs and GaAs quantum dots
- Spin-orbit interaction in Pt or Bi2Te3 nanoparticle-decorated graphene realized by a nanoneedle method
- Two-spin relaxation of P-dimers in Silicon
- Spin-orbit coupling induced two-electron relaxation in silicon donor pairs