Spin relaxation anisotropy in a GaAs quantum dot

Abstract

We report that the electron spin relaxation time, T1, in a GaAs quantum dot with a spin-1/2 ground state has a 180 degree periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots as due to the interplay of Rashba and Dresselhaus spin orbit contributions. Different from this prediction, we find that the extrema in the T1 do not occur when the magnetic field is along the [110] and [1-10] crystallographic directions. This deviation is attributed to an elliptical dot confining potential. The T1 varies by more than an order of magnitude when rotating a 3 Tesla field, reaching about 80 ms for the magic angle. We infer from the data that in our device the sign of the Rashba and Dresselhaus constants are opposite.

8 pages, 8 figures

References in corpus (8)

• Single-shot read-out of an individual electron spin in a quantum dot
• Coherent control of a single electron spin with electric fields
• Experimental signature of phonon-mediated spin relaxation
• Excited-state spectroscopy on a nearly-closed quantum dot via charge detection
• Spin relaxation at the singlet-triplet crossing in a quantum dot
• Orbital and spin relaxation in single and coupled quantum dots
• Tuning of the spin-orbit interaction in a quantum dot by an in-plane magnetic field
• Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots

Cited by in corpus (5)

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• Preparation and Readout of Multielectron High-Spin States in a Gate-Defined GaAs/AlGaAs Quantum Dot
• Confinement sensitivity in quantum dot singlet-triplet relaxation