G-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field

Abstract

We analyze orbital effects of an in-plane magnetic field on the spin structure of states of a gated quantum dot based in a two-dimensional electron gas. Starting with a $k\cdot p$ Hamiltonian, we perturbatively calculate these effects for the conduction band of GaAs, up to the third power of the magnetic field. We quantify several corrections to the g-tensor and reveal their relative importance. We find that for typical parameters, the Rashba spin-orbit term and the isotropic term, $H_{43}\propto {\mathbf{P}}^2\mathbf{B}\cdot \mathbf{\sigma }$, give the largest contributions in magnitude. The in-plane anisotropy of the g-factor is, on the other hand, dominated by the Dresselhaus spin-orbit term. At zero magnetic field, the total correction to the g-factor is typically 5-10% of its bulk value. In strong in-plane magnetic fields, the corrections are modified appreciably.

24 pages, 8 figures; v2 is in content identical to the version published in PRB. Compared to v1, the minor changes adopted in v2 are reflecting the PRB referees' suggestions

References in corpus (18)

• Prospects for Spin-Based Quantum Computing
• Zeeman energy and spin relaxation in a one-electron quantum dot
• Scalable gate architecture for densely packed semiconductor spin qubits
• Ge hole spin qubit
• Gate-controlled quantum dots and superconductivity in planar germanium
• Coupled quantum dots in bilayer graphene
• Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
• Spin properties of single electron states in coupled quantum dots
• Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot
• Spin-orbit fields in asymmetric (001) quantum wells
• Spin relaxation anisotropy in a GaAs quantum dot
• Anisotropy of spin splitting and spin relaxation in lateral quantum dots
• Dimensional reduction of the Luttinger Hamiltonian and g-factors of holes in symmetric two-dimensional semiconductor heterostructures
• Spin and cyclotron energies of electrons in GaAs/Ga${}_{1-x}$Al${}_x$As quantum wells
• Interface Contributions to the Spin-Orbit Interaction Parameters of Electrons at the (001) GaAs/AlGaAs Interface
• Spectroscopy of Quantum-Dot Orbitals with In-Plane Magnetic Fields
• Effective one-band approach for the spin splittings in quantum wells
• Non-linear and dot-dependent Zeeman splitting in GaAs/AlGaAs quantum dot arrays

Cited by in corpus (14)

• The germanium quantum information route
• Spin shuttling in a silicon double quantum dot
• Hole Spin Qubits in Ge Nanowire Quantum Dots: Interplay of Orbital Magnetic Field, Strain, and Growth Direction
• Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
• Charge-noise induced dephasing in silicon hole-spin qubits
• Spectroscopy of Quantum-Dot Orbitals with In-Plane Magnetic Fields
• Enhanced orbital magnetic field effects in Ge hole nanowires
• Orbital effects of a strong in-plane magnetic field on a gate-defined quantum dot
• Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field
• Anomalous Josephson Effect in Topological Insulator-Based Josephson Trijunction
• Modelling of planar germanium hole qubits in electric and magnetic fields
• Isotropic and Anisotropic g-factor Corrections in GaAs Quantum Dots
• Andreev spin-noise detector
• Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction