Anisotropy of spin splitting and spin relaxation in lateral quantum dots

Abstract

Inelastic spin relaxation and spin splitting ${\epsilon }_{\mathrm{s}}$ in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Due to both g-factor energy dependence and spin-orbit coupling ${\epsilon }_{\mathrm{s}}$ demonstrates a substantial non-linear magnetic field dependence similar to that observed by R.Hanson \textit{et al} [Phys. Rev. Lett. \textbf{91}, 196802 (2003)]. It also varies with the in-plane orientation of magnetic field due to crystalline anisotropy of spin-orbit coupling. Spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the 'thickness' of GaAs dot, the relaxation can be order of magnitude faster for $\mathbf{B}$ than for $B\Vert [110]$.

4 pages, 1 figure

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• Zeeman energy and spin relaxation in a one-electron quantum dot
• Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling
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Cited by in corpus (13)

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• Reexamination of spin decoherence in semiconductor quantum dots from equation-of-motion approach
• Triplet-singlet relaxation in semiconductor single and double quantum dots
• Anisotropic spin relaxation in quantum dots
• Phonon modulation of the spin-orbit interaction as a spin relaxation mechanism in quantum dots
• Spin-dependent tunneling into an empty lateral quantum dot
• Spin relaxation in an InAs quantum dot in the presence of terahertz driving fields
• Anisotropy of spin-orbit induced electron spin relaxation in [001] and [111] grown GaAs quantum dots
• Photodriven germanium hole qubit