Non-linear and dot-dependent Zeeman splitting in GaAs/AlGaAs quantum dot arrays

Abstract

We study the Zeeman splitting in lateral quantum dots that are defined in GaAs-AlGaAs het- erostructures by means of split gates. We demonstrate a non-linear dependence of the splitting on magnetic field and its substantial variations from dot to dot and from heterostructure to het- erostructure. These phenomena are important in the context of information processing since the tunability and dot-dependence of the Zeeman splitting allow for a selective manipulation of spins. We show that spin-orbit effects related to the GaAs band structure quantitatively explain the ob- served magnitude of the non-linear dependence of the Zeeman splitting. Furthermore, spin-orbit effects result in a dependence of the Zeeman splitting on predominantly the out-of-plane quantum dot confinement energy. We also show that the variations of the confinement energy due to charge disorder in the heterostructure may explain the dependence of Zeeman splitting on the dot position. This position may be varied by changing the gate voltages which leads to an electrically tunable Zeeman splitting.

References in corpus (6)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Coherent control of a single electron spin with electric fields
• Zeeman energy and spin relaxation in a one-electron quantum dot
• Enhancing the Coherence of a Spin Qubit by Operating it as a Feedback Loop That Controls its Nuclear Spin Bath
• Anisotropy of spin splitting and spin relaxation in lateral quantum dots
• Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

Cited by in corpus (4)

• Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
• G-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field
• Isotropic and Anisotropic g-factor Corrections in GaAs Quantum Dots
• Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well