Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths
arXiv:1412.6260 · doi:10.1103/PhysRevB.90.235310
Abstract
We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.
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- Quantum state transfer of angular momentum via single electron photo-excitation from a Zeeman-resolved light hole
- Non-linear and dot-dependent Zeeman splitting in GaAs/AlGaAs quantum dot arrays
- Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field
- Influence of molecular beam effusion cell quality on optical and electrical properties of quantum dots and quantum wells
- Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well