Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures

Abstract

We determine the density-dependent electron mass, m*, in two-dimensional (2D) electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHaas measurements. Using very high quality transistors with tunable electron densities we measure m* in single, high mobility specimens over a wide range of r_s (6 to 0.8). Toward low-densities we observe a rapid increase of m* by as much as 40%. For 2>r_s>0.8 the mass values fall ~10% below the band mass of GaAs. Numerical calculations are in qualitative agreement with our data but differ considerably in detail.

to be published in Physical Review Letters

References in corpus (1)

• Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system

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