Microwave-induced resistance oscillations in a back-gated GaAs quantum well

Abstract

We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov- de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.

4 pages, 4 figures

References in corpus (7)

• Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
• Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells
• Density dependent spin susceptibility and effective mass in interacting quasi-two dimensional electron systems
• Hall field-induced resistance oscillations in Ge/SiGe quantum wells
• Impact of Heterostructure Design on Transport Properties in the Second Landau Level of in-situ Back-Gated Two-Dimensional Electron Gases
• Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures
• Fine structure of high-power microwave-induced resistance oscillations

Cited by in corpus (7)

• Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells
• Gate tunable edge magnetoplasmon resonators
• Effect of illumination on quantum lifetime in GaAs quantum wells
• Microwave response of interacting oxide two-dimensional electron systems
• Obstacle-Induced Gurzhi Effect and Hydrodynamic Electron Flow in Two-Dimensional Systems
• Hidden Quantum Hall Stripes in Al${}_x$Ga${}_{1-x}$As/Al${}_{0.24}$Ga${}_{0.76}$As Quantum Wells
• Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells