38 citations · 100 across the 5 of their papers we have counts for
5 papers
Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells
X. Fu, M. D. Borisov, M. A. Zudov +3
We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with…
Microwave-induced resistance oscillations in a back-gated GaAs quantum well
X. Fu, Q. A. Ebner, Q. Shi +3
We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of…
Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to and Impact of Density Fluctuations
Qi Qian, James R. Nakamura, Saeed Fallahi +6
We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses l…
High temperature resistivity measured at ν = 5/2 as a predictor of 2DEG quality in the N=1 Landau level
Qi Qian, James R. Nakamura, Saeed Fallahi +3
We report a high temperature (T = 0.3K) indicator of the excitation gap at the filling factor fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two…
Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Wei Yi, Andrey A. Kiselev, Jacob Thorp +13
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of…