38 citations · 60 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2019★ 1 cited
Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells
X. Fu, M. D. Borisov, M. A. Zudov +3
We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with…
cond-mat.mes-hall2017★ 21 cited
Microwave-induced resistance oscillations in a back-gated GaAs quantum well
X. Fu, Q. A. Ebner, Q. Shi +3
We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of…
cond-mat.mes-hall2015★ 38 cited
Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Wei Yi, Andrey A. Kiselev, Jacob Thorp +13
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of…