Strongly enhanced effective mass in dilute two-dimensional electron systems: System-independent origin

Abstract

We measure the effective mass in a dilute two-dimensional electron system in (111)-silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A strong enhancement of the effective mass with decreasing electron density is observed. The mass renormalization as a function of the interaction parameter r_s is in good agreement with that reported for (100)-silicon, which shows that the relative mass enhancement is system- and disorder-independent being determined by electron-electron interactions only.

As published

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• Quantum Paracrystalline Shear Modes of the Electron Liquid
• The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells
• Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface
• A metal-insulator transition in 2D: Established facts and open questions
• Thermoelectric properties of the interacting two dimensional electron gas in the diffusion regime
• Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon
• Composite Fermion Mass
• Order by Disorder and by Doping in Quantum Hall Valley Ferromagnets
• Band Flattening and Landau Level Merging in Strongly-Correlated Two-Dimensional Electron Systems
• Spin and valley effects on the quantum phase transition in two dimensions