Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

Abstract

We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors, is difficult to reconcile with non-interacting electron theory.

4 pages, 4 figures, to appear in Physical Review Letters

References in corpus (4)

• Landau Level Splitting in Graphene in High Magnetic Fields
• Magnetic field dependence of valley splitting in realistic Si/SiGe quantum wells
• The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
• Wavefunctions for topological quantum registers

Cited by in corpus (6)

• Quantum non-demolition measurements of single donor spins in semiconductors
• Strongly enhanced effective mass in dilute two-dimensional electron systems: System-independent origin
• The enigma of the nu=0 quantum Hall effect in graphene
• Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface
• Parallel Magnetic Field Tuning of Valley Splitting in AlAs Two-Dimensional Electrons
• Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon