94 citations · 326 across the 9 of their papers we have counts for
9 papers
Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces
Binhui Hu, Mohamad M. Yazdanpanah, Joyce E. Coppock +1
We have fabricated ambipolar transistors on chemically prepared hydrogen-terminated Si(111) surfaces, in which a two-dimensional electron system (2DES) or a two-dimensional hole sy…
Valley Degenerate 2D Electrons in the Lowest Landau Level
Tomasz M. Kott, Binhui Hu, S. H. Brown +1
We report low temperature magnetotransport measurements on a high mobility (μ=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field dat…
High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces
Binhui Hu, Tomasz M. Kott, Robert N. McFarland +1
We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied acr…
Levitated Spinning Graphene
B. E. Kane
A method is described for levitating micron-sized few layer graphene flakes in a quadrupole ion trap. Starting from a liquid suspension containing graphene, charged flakes are inje…
Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors
L. Sun, B. E. Kane
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned…
Coulomb blockade in a Si channel gated by an Al single-electron transistor
L. Sun, K. R. Brown, B. E. Kane
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel condu…