94 citations · 326 across the 9 of their papers we have counts for
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cond-mat.mes-hall2007★ 5 cited
Coulomb blockade in a Si channel gated by an Al single-electron transistor
L. Sun, K. R. Brown, B. E. Kane
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel condu…
cond-mat.mes-hall2007★ 65 cited
Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface
K. Eng, R. N. McFarland, B. E. Kane
We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Mea…