The enigma of the nu=0 quantum Hall effect in graphene
arXiv:0906.2209 · doi:10.1016/j.ssc.2009.06.039
Abstract
We apply Laughlin's gauge argument to analyze the quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying quantized Hall effect. We argue that this graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.
Minor revisions with added references. 6 pages. Published version
References in corpus (22)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Room-Temperature Quantum Hall Effect in Graphene
- Unconventional Integer Quantum Hall effect in graphene
- Carrier transport in 2D graphene layers
- A self-consistent theory for graphene transport
- Quantum Hall Ferromagnetism in Graphene
- Landau Level Splitting in Graphene in High Magnetic Fields
- Scanning Tunneling Spectroscopy of Graphene on Graphite
- The zero-energy state in graphene in a high magnetic field
- Dissipative Quantum Hall Effect in Graphene near the Dirac Point
- Graphene integer quantum Hall effect in the ferromagnetic and paramagnetic regimes
- Spatially resolved spectroscopy of monolayer graphene on SiO2
- Electron interactions in graphene in a strong magnetic field
- Collective Modes and Skyrmion Excitations in Graphene SU(4) Quantum Hall Ferromagnets
- Excitonic gap, phase transition, and quantum Hall effect in graphene
- Ground-state of graphene in the presence of random charged impurities
- Theory of integer quantum Hall effect in graphene
- Divergent resistance at the Dirac point in graphene: Evidence for a transition in a high magnetic field
- Spontaneous Symmetry Breaking and Quantum Hall Effect in Graphene
- Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface
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- Splitting of critical energies in the =0 Landau level of graphene
- Magnetic Phases in Periodically Rippled Graphene
- Quantum transport of Dirac fermions in selected graphene nanosystems away from the charge-neutrality point