65 citations · 120 across the 4 of their papers we have counts for
4 papers
High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces
Binhui Hu, Tomasz M. Kott, Robert N. McFarland +1
We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied acr…
Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface
Robert N. McFarland, Tomasz M. Kott, Luyan Sun +2
Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degen…
Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface
K. Eng, R. N. McFarland, B. E. Kane
We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Mea…
High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces
K. Eng, R. N. McFarland, B. E. Kane
We have fabricated and characterized a field-effect transistor in which an electric field is applied through an encapsulated vacuum cavity and induces a two-dimensional electron sy…