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R. McFarland

3 papers hereh-index 5120 citations22 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author2

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall3

identity via Semantic Scholar / OpenAlex

activity
20052009
most citedInteger quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

65 citations · 79 across the 2 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2009★ 14 cited

Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface

Robert N. McFarland, Tomasz M. Kott, Luyan Sun +2

Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degen…

cond-mat.mes-hall2007★ 65 cited

Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

K. Eng, R. N. McFarland, B. E. Kane

We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Mea…

cond-mat.mes-hall2005

High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

K. Eng, R. N. McFarland, B. E. Kane

We have fabricated and characterized a field-effect transistor in which an electric field is applied through an encapsulated vacuum cavity and induces a two-dimensional electron sy…

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