Effective mass suppression in dilute, spin-polarized two-dimensional electron systems

Abstract

We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs quantum wells. When the 2DES is partially spin-polarized, m* is larger than its band value, consistent with previous results on various 2DESs. However, as we fully spin polarize the 2DES by subjecting it to strong parallel magnetic fields, m* is unexpectedly suppressed and falls even below the band mass.

4 pages, 4 figures

References in corpus (12)

• The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
• Sharp increase of the effective mass near the critical density in a metallic 2D electron system
• Two-dimensional electrons occupying multiple valleys in AlAs
• Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
• Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system
• Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells
• Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields
• Quasiparticle self-energy and many-body effective mass enhancement in a two-dimensional electron liquid
• Quasiparticle effective mass divergence in two dimensional electron systems
• Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass
• Mass enhancement of two-dimensional electrons in thin-oxide Si-MOSFET's
• Spin-independent effective mass in a valley-degenerate electron system

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