Contrast between spin and valley degrees of freedom

Abstract

We measure the renormalized effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we control their distribution between two spin and two valley subbands. We observe a marked contrast between the spin and valley degrees of freedom: When electrons occupy two spin subbands, m* strongly depends on the valley occupation, but not vice versa. Combining our m* data with the measured spin and valley susceptibilities, we find that the renormalized effective Lande g-factor strongly depends on valley occupation, but the renormalized conduction-band deformation potential is nearly independent of the spin occupation.

4+ pages, 2 figures

References in corpus (11)

• Valley susceptibility of an interacting two-dimensional electron system
• Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
• Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system
• Dependence of spin susceptibility of a two-dimensional electron system on the valley degree of freedom
• Density dependent spin susceptibility and effective mass in interacting quasi-two dimensional electron systems
• Effective mass suppression in dilute, spin-polarized two-dimensional electron systems
• Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass
• Spin Susceptibility of Interacting Two-dimensional Electrons with Anisotropic Effective Mass
• Dependence of Effective Mass on Spin and Valley Degrees of Freedom
• Parallel Magnetic Field Tuning of Valley Splitting in AlAs Two-Dimensional Electrons
• Enhancement of valley susceptibility upon complete spin-polarization