Valley dependent many-body effects in 2D semiconductors
arXiv:0904.2622 · doi:10.1103/PhysRevB.80.121303
Abstract
We calculate the valley degeneracy () dependence of the many-body renormalization of quasiparticle properties in multivalley 2D semiconductor structures due to the Coulomb interaction between the carriers. Quite unexpectedly, the dependence of many-body effects is nontrivial and non-generic, and depends qualitatively on the specific Fermi liquid property under consideration. While the interacting 2D compressibility manifests monotonically increasing many-body renormalization with increasing , the 2D spin susceptibility exhibits an interesting non-monotonic dependence with the susceptibility increasing (decreasing) with for smaller (larger) values of with the renormalization effect peaking around . Our theoretical results provide a clear conceptual understanding of recent valley-dependent 2D susceptibility measurements in AlAs quantum wells.
5 pages, 3 figures
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- Spontaneous valley polarization of interacting carriers in a monolayer semiconductor
- Compressibility, zero sound, and effective mass of a fermionic dipolar gas at finite temperature
- Temperature-dependent compressibility in graphene and two-dimensional systems
- Universal enhancement of superconductivity in two dimensional semiconductors at low doping by electron-electron interaction
- Valley-dependent 2D transport in Si-MOSFETs
- Thermoelectric properties of the interacting two dimensional electron gas in the diffusion regime
- Magneto-Optical Measurements of the Negatively Charged 2 Exciton in WSe
- Exchange Enhancement of the Electron-Phonon Interaction: the Case of Weakly Doped Two-Dimensional Multivalley Semiconductors