Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime
arXiv:cond-mat/0411391 · doi:10.1103/PhysRevLett.93.256402
Abstract
We report the temperature() and perpendicular magnetic field() dependence of the Hall resistivity of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low Hall coefficient, , is found to be enhanced when decreases. Strong magnetic fields further enhance the slope of at all temperatures studied. Coulomb interaction corrections of a Fermi liquid(FL) in the ballistic regime can not explain the enhancement of which occurs in the same regime as the anomalous metallic longitudinal conductivity. In particular, although the metallic conductivity in 2D systems has been attributed to electron interactions in a FL, these same interactions should reduce, {\it not enhance} the slope of as decreases and/or increases.
arXiv commentAccepted for publication in Physical Review Letters
References in corpus (19)
- Metallic behavior and related phenomena in two dimensions
- Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
- Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers
- Indication of the ferromagnetic instability in a dilute two-dimensional electron system
- Sharp increase of the effective mass near the critical density in a metallic 2D electron system
- On the Theory of Metal-Insulator Transitions in Gated Semiconductors
- Interaction corrections at intermediate temperatures: magneto-resistance in parallel field
- Interaction-induced magnetoresistance in a two-dimensional electron gas
- Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime
- Interaction-induced magnetoresistance: From the diffusive to the ballistic regime
- Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures
- Interaction Corrections to Two-Dimensional Hole Transport in Large Limit
- Metallicity and its low temperature behavior in dilute 2D carrier systems
- Interaction corrections to the Hall coefficient at intermediate temperatures
- In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment
- Calculated temperature-dependent resistance in low density 2D hole gases in GaAs heterostructure
- The metallic resistance of a dilute two-dimensional hole gas in a GaAs quantum well: two-phase separation at finite temperature?
- Hall Coefficient in an Interacting Electron Gas
- Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures
Cited by in corpus (14)
- 2D Metal-Insulator transition as a percolation transition
- The so-called two dimensional metal-insulator transition
- Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas
- Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System
- Spin polarization induced tenfold magneto-resistivity of highly metallic 2D holes in a narrow GaAs quantum well
- Valley dependent many-body effects in 2D semiconductors
- Interaction Correction to the Longitudinal Conductivity and Hall Resistivity in High Quality Two-Dimensional GaAs Electron and Hole Systems
- Hall coefficient and magnetoresistance of 2D spin-polarized electron systems
- Degenerate versus semi-degenerate transport in a correlated 2D hole system
- Temperature dependent weak field Hall resistance in 2D carrier systems
- Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si
- Impact of Short-Range Scattering on the Metallic Transport of Strongly Correlated 2D Holes in GaAs Quantum Wells
- Evidence for a New Intermediate Phase in a Strongly Correlated 2D System near Wigner Crystallization
- Surprising coincidence of the apparent 2D metal-to-insulator transition data with Fermi-gas based model results