A. P. Ramirez

activity

20012005

most citedMagnetically driven ferroelectric order in Ni

_{3}

_{2}

_{8}

644 citations · 698 across the 7 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2005★ 644 cited

Magnetically driven ferroelectric order in Ni $_{3}$ V $_{2}$ O $_{8}$

G. Lawes, A. B. Harris, T. Kimura +8

We show that for Ni $_{3}$ V $_{2}$ O $_{8}$ long-range ferroelectric and incommensurate magnetic order appear simultaneously in a single phase transition. The temperature and magnetic field…

cond-mat.str-el2005★ 29 cited

Strongly Enhanced Hole-Phonon Coupling in the Metallic State of the Dilute Two-Dimensional Hole Gas

X. P. A. Gao, G. S. Boebinger, A. P. Mills +3

We have studied the temperature dependent phonon emission rate $P$ ( $T$ ) of a strongly interacting ( $r_{s} \geq$ 22) dilute 2D GaAs hole system using a standard carrier heating techniqu…

cond-mat.str-el2004★ 23 cited

Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime

Xuan P. A. Gao, G. S. Boebinger, A. P. Mills +3

We report the temperature( $T$ ) and perpendicular magnetic field( $B$ ) dependence of the Hall resistivity $ρ_{x y} (B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broa…

cond-mat.mtrl-sci2003

Low-frequency Einstein mode in the zero-expansion material YbGaGe

F. R. Drymiotis, G. Lawes, A. Migliori +8

This paper was withdrawn by the authors.

cond-mat.str-el2003

Fermi liquid behavior of metallic 2D holes at high temperatures

Xuan P. A. Gao, A. P. Mills, A. P. Ramirez +2

The resistivity $ρ$ of high mobility dilute 2D holes in GaAs exhibits a peak at a certain temperature $T^{*}$ in zero magnetic field( $B$ =0). In the $T > T^{*}$ regime where d $ρ$ /d $T <$ 0,…

cond-mat.mtrl-sci2002

Free and Trapped Injected Carriers in C60 Crystals

V. Y. Butko, A. P. Ramirez, C. Kloc

We report on the conductance from two-contact carrier injection in C60 single crystals. In the nonlinear regime, the current and voltage obey a power law, I \~ V^m, where m can be…