Impact of Short-Range Scattering on the Metallic Transport of Strongly Correlated 2D Holes in GaAs Quantum Wells
arXiv:1308.3698 · doi:10.1103/PhysRevB.90.035310
Abstract
Understanding the non-monotonic behavior in the temperature dependent resistance, R(T), of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and metal-insulator-transitions. We have studied the transport of high mobility 2D holes in 20nm wide GaAs quantum wells (QWs) with varying short-range disorder strength by changing the Al fraction x in the Al_xGa_{1-x}As barrier. Via varying the short range interface roughness and alloy scattering, it is observed that increasing x suppresses both the strength and characteristic temperature scale of the 2D metallicity, pointing to the distinct role of short-range versus long-range disorder in the 2D metallic transport in this correlated 2D hole system with interaction parameter r_s~ 20.
accepted for publication in Phys Rev B
References in corpus (10)
- Metal-insulator transition in two-dimensional electron systems
- Phase Diagram of the Low-Density Two-Dimensional Homogeneous Electron Gas
- Coulomb Correlations and the Wigner-Mott Transition
- Transport and percolation in a low-density high-mobility two-dimensional hole system
- Two-dimensional metal-insulator-transition as a potential fluctuation driven semiclassical transport phenomenon
- Strongly Enhanced Hole-Phonon Coupling in the Metallic State of the Dilute Two-Dimensional Hole Gas
- Linear temperature dependence of conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition
- Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime
- Temperature dependent transport of correlated disordered electrons: elastic vs. inelastic scattering
- Exploration of the Limits to Mobility in Two-Dimensional Hole Systems in GaAs/AlGaAs Quantum Wells