Hall Coefficient in an Interacting Electron Gas

Abstract

The Hall conductivity in a weak homogeneous magnetic field, ${\omega }_c\tau \ll 1$, is calculated. We have shown that to leading order in $1/{\epsilon }_F\tau$ the Hall coefficient $R_H$ is not renormalized by the electron-electron interaction. Our result explains the experimentally observed stability of the Hall coefficient in a dilute electron gas not too close to the metal-insulator transition. We avoid the currently used procedure that introduces an artificial spatial modulation of the magnetic field. The problem of the Hall effect is reformulated in a way such that the magnetic flux associated with the scattering process becomes the central element of the calculation.

23 pages, 15 figures

References in corpus (7)

• The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
• Indication of the ferromagnetic instability in a dilute two-dimensional electron system
• Scaling of the magnetoconductivity of silicon MOSFET's: evidence for a quantum phase transition in two dimensions
• The thermodynamic spin magnetization of strongly correlated 2d electrons in a silicon inversion layer
• Interaction corrections to the Hall coefficient at intermediate temperatures
• Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon
• Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures

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