Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si
arXiv:cond-mat/0504475 · doi:10.1134/1.1951019
Abstract
Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (T<Tm) agree qualitatively with the semiclassical model, that takes into account a broadening of the Fermi-distribution solely. The semiclassical result considerably exceeds an interaction-induced quantum correction. In the ``high-temperature'' domain (T>Tm), the Rxy(T) dependence can be qualitatively explained in terms of either a semiclassical T-dependence of a transport time, or a thermal activation of carries from a localized band.
arXiv comment4 pages, 3 figures
References in corpus (12)
- Possible Metal/Insulator Transition at B=0 in Two Dimensions
- Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
- The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
- Interaction-induced magnetoresistance in a two-dimensional electron gas
- Phase separation in the two-dimensional electron liquid in MOSFETs
- Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures
- Interaction corrections to the Hall coefficient at intermediate temperatures
- Metallicity and its low temperature behavior in dilute 2D carrier systems
- A few electrons per ion scenario for the B=0 metal-insulator transition in two dimensions
- Hall Coefficient in an Interacting Electron Gas
- Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime
- Metal-insulator transition in 2D: a role of the upper Habbard band