10 papers
Reply to Comment (cond-mat/0311174)
V. M. Pudalov, M. E. Gershenson, H. Kojima +2
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densit…
Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality
V. M. Pudalov, M. E. Gershenson, H. Kojima
In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after…
Absence of Ferromagnetic Instability at the Metal-Insulator Transition in Si-inversion Layers
V. M. Pudalov, M. E. Gershenson, H. Kojima
We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the cri…
Unexpected Metallic-like Behavior of the Resistance in the Dielectric Spin Density Wave State in (TMTSF)2PF6
A. V. Kornilov, V. M. Pudalov, Y. Kitaoka +6
We report unexpected features of the transport in the dielectric spin density wave (SDW) phase of the quasi one-dimensional compound (TMTSF)_2PF_6: the resistance exhibits a maximu…
Valley Splitting in Si-Inversion Layers at Low Magnetic Fields
V. M. Pudalov, A. Punnoose, G. Brunthaler +2
We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes…
Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder
V. M. Pudalov, G. Brunthaler, A. Prinz +1
We compare the effects of temperature, disorder and parallel magnetic field on the metallic-like temperature dependence of the resistivity. We found a similarity between the effect…