activity
19982007
most citedIntervalley scattering and weak localization in Si-based two-dimensional structures

26 citations · 26 across the 2 of their papers we have counts for

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Showing 2002Show all

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cond-mat.str-el2002

Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality

V. M. Pudalov, M. E. Gershenson, H. Kojima

In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after…