activity
19972020
most citedThe low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

216 citations · 533 across the 14 of their papers we have counts for

collaborators

15 papers

cond-mat.mtrl-sci2020★ 131 cited

Mn-rich MnSb2Te4: A topological insulator with magnetic gap closing at high Curie temperatures of 45-50 K

S. Wimmer, J. Sánchez-Barriga, P. Küppers +18

Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with sup…

cond-mat.str-el2005★ 3 cited

Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

A. Yu. Kuntsevich, D. A. Knyazev, V. I. Kozub +3

Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``meta…

cond-mat.str-el2004

Reply to Comment (cond-mat/0311174)

V. M. Pudalov, M. E. Gershenson, H. Kojima +2

We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densit…

cond-mat.str-el2002★ 6 cited

Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"

V. M. Pudalov, M. Gershenson, H. Kojima +5

Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]

cond-mat.str-el2002★ 76 cited

Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

V. M. Pudalov, M. E. Gershenson, H. Kojima +3

We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective…

cond-mat.mes-hall2001★ 216 cited

The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

V. M. Pudalov, M. E. Gershenson, H. Kojima +5

We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities cm, which includes…