Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices
arXiv:cond-mat/9712205 · doi:10.1016/S0038-1098(98)00013-1
Abstract
A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particle-hole diffusion channel. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures.
arXiv comment5 pages, 3 figures, Solid State Communications, in print
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