72 citations · 158 across the 7 of their papers we have counts for
7 papers
Linear temperature dependence of conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition
K. Lai, W. Pan, D. C. Tsui +3
In a high mobility two-dimensional electron system in Si, near the critical density, cm, of the apparent metal-to-insulator transition, the conductivi…
Initial stage of the 2D-3D transition of a strained SiGe layer on a pit-patterned Si(001) template
Gang Chen, Herbert Lichtenberger, Guenther Bauer +2
We investigate the initial stage of the 2D-3D transition of strained Ge layers deposited on pit-patterned Si(001) templates. Within the pits, which assume the shape of inverted, tr…
Valley splitting of Si/SiGe heterostructures in tilted magnetic fields
K. Lai, T. M. Lu, W. Pan +6
We have investigated the valley splitting of two-dimensional electrons in high quality Si/SiGe heterostructures under tilted magnetic fields. For all the samples in our…
Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
K. Lai, P. D. Ye, W. Pan +4
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) AlO as the gate dielectric are fabricated on the Si/SiGe hetero…
Transient-Enhanced Surface Diffusion on Native-Oxide-Covered Si(001) Nano-Structures during Vacuum Annealing
H. Lichtenberger, M. Muehlberger, F. Schaffler
We report on the transient-enhanced shape transformation of nano-structured Si(001) surfaces upon in vacuo annealing at relatively low temperatures of 1175K - 1225K for a few minut…
Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy
J. Myslivecek, C. Schelling, F. Schaffler +4
Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of strai…