F. Schaffler

most citedModulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

12 citations · 12 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2005★ 12 cited

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

K. Lai, P. D. Ye, W. Pan +4

Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al $_{2}$ O $_{3}$ as the gate dielectric are fabricated on the Si/Si $_{1 - x}$ Ge $_{x}$ hetero…

cond-mat.mtrl-sci2002

Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy

J. Myslivecek, C. Schelling, F. Schaffler +4

Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of strai…