6 papers
Reply to Comment (cond-mat/0311174)
V. M. Pudalov, M. E. Gershenson, H. Kojima +2
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densit…
On the two-dimensional metallic state in silicon-on-insulator structures
G. Brunthaler, A. Prinz, G. Pillwein +2
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconduct…
Valley Splitting in Si-Inversion Layers at Low Magnetic Fields
V. M. Pudalov, A. Punnoose, G. Brunthaler +2
We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes…
Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder
V. M. Pudalov, G. Brunthaler, A. Prinz +1
We compare the effects of temperature, disorder and parallel magnetic field on the metallic-like temperature dependence of the resistivity. We found a similarity between the effect…
Weak-localization type description of conduction in the "anomalous" metallic state
B. L. Altshuler, G. W. Martin, D. L. Maslov +4
This paper is devoted to the temperature dependence of the resistivity in Si- MOS samples over the wide range of densities in the ``metallic phase'' (n>n_c) but not too close to th…
Time-dependent Effects in the Metallic Phase in Si-MOS: Evidence for Non-Diffusive Transport
V. M. Pudalov, G. Brunthaler, A. Prinz +2
We have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the cr…