216 citations · 643 across the 21 of their papers we have counts for
22 papers
Dipole trap model for the metallic state in gated silicon-inversion layers
T. Hörmann, G. Brunthaler
In order to investigate the metallic state in high-mobility Si-MOS structures, we have further developed and precised the dipole trap model which was originally proposed by B.L. Al…
Single-Electron Transistor in Strained Si/SiGe Heterostructures
Thomas Berer, Dietmar Pachinger, Georg Pillwein +4
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography w…
Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si
A. Yu. Kuntsevich, D. A. Knyazev, V. I. Kozub +3
Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``meta…
Numerical evaluation of the dipole-scattering model for the metal-insulator transition in gated high mobility Silicon inversion layers
T. Hörmann, G. Brunthaler
The dipole trap model is able to explain the main properties of the apparent metal-to-insulator transition in gated high mobility Si-inversion layers. Our numerical calculations ar…
Reply to Comment (cond-mat/0311174)
V. M. Pudalov, M. E. Gershenson, H. Kojima +2
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densit…
On the two-dimensional metallic state in silicon-on-insulator structures
G. Brunthaler, A. Prinz, G. Pillwein +2
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconduct…