216 citations · 643 across the 21 of their papers we have counts for
16 papers · 1 filter
Dipole trap model for the metallic state in gated silicon-inversion layers
T. Hörmann, G. Brunthaler
In order to investigate the metallic state in high-mobility Si-MOS structures, we have further developed and precised the dipole trap model which was originally proposed by B.L. Al…
Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si
A. Yu. Kuntsevich, D. A. Knyazev, V. I. Kozub +3
Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``meta…
Reply to Comment (cond-mat/0311174)
V. M. Pudalov, M. E. Gershenson, H. Kojima +2
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densit…
On the two-dimensional metallic state in silicon-on-insulator structures
G. Brunthaler, A. Prinz, G. Pillwein +2
It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconduct…
Reply to Comment on "Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers"
V. M. Pudalov, G. Brunthaler, A. Prinz +1
Reply to the Comment by V.T. Dolgopolov and A.V. Gold [cond-mat/0203276].
Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"
V. M. Pudalov, M. Gershenson, H. Kojima +5
Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]