Dipole trap model for the metallic state in gated silicon-inversion layers

Abstract

In order to investigate the metallic state in high-mobility Si-MOS structures, we have further developed and precised the dipole trap model which was originally proposed by B.L. Altshuler and D.L. Maslov [Phys. Rev. Lett.\ 82, 145 (1999)]. Our additional numerical treatment enables us to drop several approximations and to introduce a limited spatial depth of the trap states inside the oxide as well as to include a distribution of trap energies. It turns out that a pronounced metallic state can be caused by such trap states at appropriate energies whose behavior is in good agreement with experimental observations.

16 pages, 10 figures, submitted

References in corpus (5)

• Anderson Transitions
• Metal-insulator transition in two-dimensional electron systems
• Metal-Insulator Transition in Disordered Two-Dimensional Electron Systems
• 2D Metal-Insulator transition as a percolation transition
• The so-called two dimensional metal-insulator transition