Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers

Abstract

We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D-plane. The magnetoresistance is almost isotropic; this result does not support the suggestion of the orbital origin of the MR in Si-inversion layer. In the hopping regime, however, the MR contains a weak anisotropic component that is non-monotonic in magnetic field. We found that the field, at which the MR saturates, for different samples varies by a factor of two, being lower or higher than the field of complete spin polarization of free carriers. Therefore, the saturation of the MR can not be identified with the spin polarization of free carriers.

4 pages, 4 figures; New data added

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• Valley polarization assisted spin polarization in two dimensions
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• Indication of band flattening at the Fermi level in a strongly correlated electron system
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• Probing Electron Interactions in a Two-Dimensional System by Quantum Magneto-Oscillations
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• Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers
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• Spin-valley interplay in two-dimensional disordered electron liquid
• Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
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• Spin polarization and exchange-correlation effects in transport properties of two-dimensional electron systems in silicon
• Two-dimensional system of strongly interacting electrons in silicon (100) structures
• Interplay among spin, orbital effects and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field
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• A metal-insulator transition in 2D: Established facts and open questions
• On the Electron-Electron Interactions in Two Dimensions
• Evidence for mixed phases and percolation at the metal-insulator transition in two dimensions
• Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons
• Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
• Spectrum of an open disordered quasi-two-dimensional electron system: strong orbital effect of the weak in-plane magnetic field
• Two-Component Scaling near the Metal-Insulator Bifurcation in Two-Dimensions
• Universal behavior of magnetoresistance in quantum dot arrays with different degree of disorder
• Reply to Comment on "Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers"