Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas

Abstract

We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- ($9.7$GHz) and W-band ($94$GHz) microwave cavities, with corresponding Zeeman fields of $0.35$T and $3.36$T, respectively. It is found that the conduction electron resonance signal increases by two orders of magnitude from X- to W-band, while the hyperfine-split donor resonance signals are enhanced by over one order of magnitude. We rule out a bolometric origin of the resonance signals, and find that direct spin-dependent scattering between the two-dimensional electron gas and neutral donors is inconsistent with the experimental observations. We propose a new polarization transfer model from the donor to the conduction electrons as the main contributer to the spin resonance signals observed.

5 pages, 3 figures

References in corpus (6)

• Single-shot read-out of an individual electron spin in a quantum dot
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Quantum non-demolition measurements of single donor spins in semiconductors
• Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
• Spin-dependent scattering in a silicon transistor
• Electrically detected magnetic resonance using radio-frequency reflectometry

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• Large-scale atomistic density functional theory calculations of phosphorus-doped silicon quantum bits
• Electrically detected spin echoes of donor nuclei in silicon
• CW and pulsed electrically detected magnetic resonance spectroscopy at 263 GHz/12 T on operating amorphous silicon solar cells
• Real Time Electrical Detection of Coherent Spin Oscillations
• Qubit guidelines for solid-state spin defects
• Quantum read-out and fast initialization of nuclear spin qubits with electric currents
• Microwave manipulation of electrically injected spin polarized electrons in silicon