77 citations · 256 across the 9 of their papers we have counts for
9 papers
Stark shift and field ionization of arsenic donors in Si-SOI structures
C. C. Lo, S. Simmons, R. Lo Nardo +8
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic d…
Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
C. D. Weis, C. C. Lo, V. Lang +7
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated…
A spin quantum bit architecture with coupled donors and quantum dots in silicon
T. Schenkel, C. C. Lo, C. D. Weis +3
Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechn…
Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas
C. C. Lo, V. Lang, R. E. George +5
We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- (GHz) and W-band (GHz) mic…
Critical issues in the formation of quantum computer test structures by ion implantation
T. Schenkel, C. C. Lo, C. D. Weis +3
The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the deve…
Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
C. C. Lo, J. Bokor, T. Schenkel +2
We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silico…