Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon

Abstract

We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

References in corpus (5)

• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Spin quantum computation in silicon nanostructures
• High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces
• Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing

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