Spin-dependent recombination involving oxygen-vacancy complexes in silicon

Abstract

Spin-dependent relaxation and recombination processes in $\gamma$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between ${}^{31}$P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics are studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin 1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.

13 pages, 11 figures

References in corpus (8)

• Atomic clock transitions in silicon-based spin qubits
• Electrical detection of 31P spin quantum states
• Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory
• Electrical detection of spin echoes for phosphorus donors in silicon
• Long spin coherence in silicon with an electrical spin trap readout
• Phosphorus donors in highly strained silicon
• Time Constants of Spin-Dependent Recombination Processes
• Electrically Detected Double Electron-Electron Resonance: Exchange Interaction of 31P Donors and Pb0 Defects at the Si/SiO2 Interface

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• Pulsed Low-Field Electrically Detected Magnetic Resonance
• Spin-dependent recombination at arsenic donors in ion-implanted silicon
• Multiple-quantum transitions and charge-induced decoherence of donor nuclear spins in silicon
• Electron nuclear double resonance with donor-bound excitons in silicon