Spin-dependent recombination at arsenic donors in ion-implanted silicon

Abstract

Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and electrically detected magnetic resonance (EDMR) monitoring the DC current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance in particular of As in weak magnetic fields and at low resonance frequencies (40-1200 MHz), where high-field-forbidden transitions between the magnetic substates can be observed due to the mixing of electron and nuclear spin states. Several implantation-induced defects are present in the samples studied and act as spin readout partner. We explicitly demonstrate this by electrically detected electron double resonance experiments and identify a pair recombination of close pairs formed by As donors and oxygen-vacancy centers in an excited triplet state (SL1) as the dominant spin-dependent process in As-implanted Czochralski-grown Si.

arXiv comment4 pages, 3 figures

References in corpus (11)

• Single-shot readout of an electron spin in silicon
• Atomic clock transitions in silicon-based spin qubits
• Electrical detection of 31P spin quantum states
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Electrical detection of spin echoes for phosphorus donors in silicon
• Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance
• Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon
• Lock-in detection for pulsed electrically detected magnetic resonance
• Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon
• Spin-dependent recombination involving oxygen-vacancy complexes in silicon
• Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

Cited by in corpus (4)

• Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors
• Quadrupolar Effects on Nuclear Spins of Neutral Arsenic Donors in Silicon
• Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
• Multiple-quantum transitions and charge-induced decoherence of donor nuclear spins in silicon