Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon

Abstract

Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $\alpha |\uparrow \downarrow >+\beta |\downarrow \uparrow >$ and $-\beta |\uparrow \downarrow >+\alpha |\downarrow \uparrow >$ were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and $|\uparrow \uparrow >$ or $|\downarrow \downarrow >$ states are observed clearly. A continuous change of $\alpha$ and $\beta$ with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.

6 pages, 5 figures

References in corpus (13)

• Solid state quantum memory using the 31P nuclear spin
• Electrical detection of 31P spin quantum states
• Coherence of Spin Qubits in Silicon
• Electron spin phase relaxation of phosphorus donors in nuclear spin enriched silicon
• Silicon-based Quantum Computation
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Fast nuclear spin hyperpolarization of phosphorus in silicon
• Electrical detection of spin echoes for phosphorus donors in silicon
• Long spin coherence in silicon with an electrical spin trap readout
• Simultaneous sub-second hyperpolarization of the nuclear and electron spins of phosphorus in silicon
• Quantum non-demolition measurements of single donor spins in semiconductors
• Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields
• Spin-dependent recombination - an electronic readout mechanism for solid state quantum computers

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• Analysis of quantum coherence in bismuth-doped silicon: a system of strongly coupled spin qubits
• Separating hyperfine from spin-orbit interactions in organic semiconductors by multi-octave magnetic resonance using coplanar waveguide microresonators
• Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon
• Numerical study of spin-dependent transition rates within pairs of dipolar and strongly exchange coupled spins with (s=1/2) during magnetic resonant excitation
• Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature
• Quadrupolar Effects on Nuclear Spins of Neutral Arsenic Donors in Silicon
• Pulsed Low-Field Electrically Detected Magnetic Resonance
• Spin-dependent recombination involving oxygen-vacancy complexes in silicon
• Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields
• Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
• Preparation of quantum states of two spin-$\frac{1}{2}$ particles in the form of the Schmidt decomposition
• Spin-dependent recombination at arsenic donors in ion-implanted silicon
• Deterministic preparation of Dicke states of donor nuclear spins in silicon by cooperative pumping
• Spin relaxation dynamics of radical-pair processes at low magnetic fields
• Optical dependence of electrically-detected magnetic resonance in lightly-doped Si:P devices
• Quantum read-out and fast initialization of nuclear spin qubits with electric currents
• Electron nuclear double resonance with donor-bound excitons in silicon