Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon

Abstract

Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band transport from injector to detector, and (ii) long timescales (~1ns) originating from delays associated with capture/re-emission in shallow impurity traps. The origin of this phenomenon, examined via temperature, voltage, and electron density dependence measurements, is established by means of comparison to a numerical model and is shown to reveal the participation of metastable excited states in the phosphorus impurity spectrum. This work therefore demonstrates the potential to make the study of macroscopic spin transport relevant to the quantum regime of individual spin interactions with impurities as envisioned for quantum information applications.

major revision

References in corpus (13)

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Cited by in corpus (9)

• Analysis of phonon-induced spin relaxation processes in silicon
• Donor-driven spin relaxation in multi-valley semiconductors
• Electric-field control of spin accumulation signals in silicon at room temperature
• Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
• A Brief Review of Ferroelectric Control of Magnetoresistance in Organic Spin Valves
• Suppressing spin relaxation in silicon
• Spin relaxation via exchange with donor impurity-bound electrons
• Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
• Signature of Hanle Precession in Trilayer MoS2: Theory and Experiment