Spin-Polarized Transient Electron Trapping in Phosphorus-doped Silicon

Abstract

Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band transport from injector to detector, and (ii) long timescales (~1ns) originating from delays associated with capture/re-emission in shallow impurity traps. The origin of this phenomenon, examined via temperature, voltage, and electron density dependence measurements, is established by means of comparison to a numerical model and is shown to reveal the participation of metastable excited states in the phosphorus impurity spectrum. This work therefore demonstrates the potential to make the study of macroscopic spin transport relevant to the quantum regime of individual spin interactions with impurities as envisioned for quantum information applications.

major revision

References in corpus (7)

• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices
• Oblique Hanle Effect in Semiconductor Spin Transport Devices
• The Larmor clock and anomalous spin dephasing in silicon
• Non-ohmic spin transport in n-type doped silicon
• Reverse Schottky-Asymmetry Spin Current Detectors